| PART |
Description |
Maker |
| 2N1522 |
Germanium Power Transistors
|
GPD Optoelectronic Devices
|
| 2N1038 2N1039 2N1040 2N1041 2N2554 2N2556 2N2552 2 |
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| Q60103-X152-D Q60103-X152-E Q60103-X152-F Q60103-X |
pnp germanium transistors pnp型锗晶体
CAP .0022UF 1600V METAL POLYPRO pnp型锗晶体
Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:37; Connector Shell Size:14; Connecting
24 V, PNP germanium transistor
20 V, PNP germanium transistor
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2N1605 |
Germanium NPN Transistors
|
GPD Optoelectronic Devices
|
| AC128 |
Germanium Small Signal Transistors
|
GPD Optoelectronic Devices
|
| 2N3792 2N3789 2N3790 2N3791 |
POWER TRANSISTORS(10A/150W)
POWER TRANSISTORS(10A150W)
POWER TRANSISTORS(10A,150W)
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION
|
MOSPEC[Mospec Semiconductor]
|
| UPC3232TB-E3-A UPC3232TB UPC3232TB-E3 |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| NTE104 |
Germanium PNP Transistor Audio Frequency Power Amplifier
|
NTE[NTE Electronics]
|
